Narrow band gap photovoltaic devices with enhanced open circuit

Details Narrow band gap photovoltaic devices with enhanced open circuit Narrow band gap photovoltaic devices with enhanced open circuit

1983-04-15

1984-09-11

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136249, 136255, 357 2, 357 30, H01L 3106

Patent

active

044711557

ABSTRACT:
The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device includes a pair of doped regions and an intrinsic body between the doped regions. The intrinsic body includes a first intrinsic region and an open circuit voltage enhancement means including a second intrinsic region. The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.

REFERENCES:
patent: 4379943 (1983-04-01), Yang et al.

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