Narrow and wide copper interconnections composed of (111),...

Details Narrow and wide copper interconnections composed of (111),... Narrow and wide copper interconnections composed of (111),...

2005-07-21

2010-06-01

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S761000, C257S762000, C257SE23011

Reexamination Certificate

active

07728432

ABSTRACT:
A semiconductor device includes: a semiconductor substrate; an insulating film provided on the semiconductor substrate; a plurality of copper interconnections provided on the same level in the insulating film. The copper interconnection includes: a first copper interconnection having a relatively narrow width; and a second copper interconnection having a relatively wide width. The first copper interconnection has the top surface thereof principally composed of copper, and the second copper interconnection has the top surface thereof principally composed of copper.

REFERENCES:
patent: 6291885 (2001-09-01), Cabral, Jr. et al.
patent: 6303490 (2001-10-01), Jeng
patent: 6391774 (2002-05-01), Takewaki
patent: 6709970 (2004-03-01), Park et al.
patent: 2004/0014312 (2004-01-01), Kunishima et al.
patent: 2004/0094511 (2004-05-01), Seo et al.
patent: 1 345 270 (2003-09-01), None
patent: 2001-068475 (2001-03-01), None
patent: 2004-040022 (2004-02-01), None
Japanese Patent Office issued a Japanese Office Action dated Aug. 4, 2009, Application No. 2004-229779.

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