Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Ballistic transport device
Reexamination Certificate
2011-08-16
2011-08-16
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Ballistic transport device
C257S347000, C257SE29245, C257SE29286
Reexamination Certificate
active
07999251
ABSTRACT:
A FET structure with a nanowire forming the FET channel, and doped source and drain regions formed by radial epitaxy from the nanowire body is disclosed. A top gated and a bottom gated nanowire FET structures are discussed. The source and drain fabrication can use either selective or non-selective epitaxy.
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Chu Jack O.
Cohen Guy M.
Ott John A.
Rooks Michael J.
Solomon Paul M.
Alexanian Vazken
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Such Matthew W
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