Nanowire Filament

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature

Reexamination Certificate

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C257S536000, C257SE23141

Reexamination Certificate

active

11142103

ABSTRACT:
A method of manufacturing a nanowire filament includes forming and fusing actions. In a forming action, close proximity conductors are formed. In another forming action, a junction oxide is formed between the close proximity conductors. In a fusing action, a nanowire filament is fused between the close proximity conductors, through the junction oxide. A circuit is also provided, having first and second close proximity conductors, and a nanowire filament fused between the close proximity conductors.

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