Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-08-02
2011-08-02
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE31093, C977S762000, C977S938000
Reexamination Certificate
active
07989800
ABSTRACT:
A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.
REFERENCES:
patent: 2009/0050876 (2009-02-01), Marks et al.
Y. Chun. et al., “High-performance metal-induced lateral-cyrstallization polisilicon thin-film transistors with multiple nanowire channels and mulitiple gates” IEEE trans. on NANO. Tech. vol. 5, No. 3, p. 157-162, 2006.
Ioannou Dimitris E.
Li Qiliang
Yang Yang
Zhu Xiaoxiao
George Mason Intellectual Properties, Inc.
Grossman David
Laurenzi, III Mark A
Pham Thanh V
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