Nanowire device and method of fabricating the same

Details Nanowire device and method of fabricating the same Nanowire device and method of fabricating the same

2008-04-15

2008-04-15

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S017000, C257S040000, C257S079000

Reexamination Certificate

active

11406255

ABSTRACT:
A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a first electrode layer formed on the substrate, a second electrode layer facing the first electrode layer, a plurality of nanowires interposed at a predetermined interval between the first electrode layer and the second electrode layer to connect the same, and an electrolyte containing an electrolytic salt filling spaces between the nanowires.

REFERENCES:
patent: 7122827 (2006-10-01), Alizadeh et al.
patent: 2007/0235738 (2007-10-01), Jin et al.
patent: 2007/0267625 (2007-11-01), Wang et al.

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