Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2011-01-04
2011-01-04
Pert, Evan (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S414000, C257SE33006, C438S022000, C438S048000, C977S932000
Reexamination Certificate
active
07863625
ABSTRACT:
Embodiments of the present invention are directed to nanowire (100) devices having concentric and coaxial doped regions and nanocrystals (108,110) disposed on the outer surfaces. In certain embodiments, the nanowire devices can include a light-emitting region (120) and be operated as a light-emitting diode (“LED”) (200), while in other embodiments, the nanowire devices can be operated as a light-detection device (600). The nanocrystals (108,110) disposed on the outer surfaces provide electron-conduction paths and include spaces that allow light to penetrate and be emitted from nanowire regions.
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Bratkovski Alexandre
Kamins Theodore I.
Hewlett--Packard Development Company, L.P.
Munoz Andres
Pert Evan
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