Nanowire-based light-emitting diodes and light-detection...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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C257S414000, C257SE33006, C438S022000, C438S048000, C977S932000

Reexamination Certificate

active

07863625

ABSTRACT:
Embodiments of the present invention are directed to nanowire (100) devices having concentric and coaxial doped regions and nanocrystals (108,110) disposed on the outer surfaces. In certain embodiments, the nanowire devices can include a light-emitting region (120) and be operated as a light-emitting diode (“LED”) (200), while in other embodiments, the nanowire devices can be operated as a light-detection device (600). The nanocrystals (108,110) disposed on the outer surfaces provide electron-conduction paths and include spaces that allow light to penetrate and be emitted from nanowire regions.

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Tian et al, Coaxial silicon nanowires as solar cells and nanoelectronic power sources, Oct. 18, 2007, Nature 449, 885-889.
Talapin et al, Synthesis of Colloidal PbSe/PbS Core-Shell Nanowires and PbS/Au Nanowire-Nanocrystal Heterostructures, Sep. 5, 2007, J. Phys. Chem. C, vol. 111, pp. 14049-14054.

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