Nanotube transistor integrated circuit layout

Details Nanotube transistor integrated circuit layout Nanotube transistor integrated circuit layout

2006-08-24

2008-12-09

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S236000, C257SE51040, C257SE31073, C977S742000, C977S936000

Reexamination Certificate

active

07462890

ABSTRACT:
An integrated circuit layout of a carbon nanotube transistor device includes a first and second conductive material. The first conductive material is connected to ends of single-walled carbon nanotubes below (or above) the first conductive material. The second conductive material is not electrically connected to the nanotubes below (or above) the second conductive material. The first conductive material may be metal, and the second conductive material may be polysilicon or metal. The nanotubes are perpendicular to the first conductive material. In one implementation, the first and second conductive materials form interdigitated fingers. In another implementation, the first conductive material forms a serpentine track.

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