Nanotube transistor and rectifying devices

Details Nanotube transistor and rectifying devices Nanotube transistor and rectifying devices

2005-09-14

2008-03-18

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S024000, C257S900000, C257S142000, C257S261000, C438S447000, C438S302000, C438S447000

Reexamination Certificate

active

07345296

ABSTRACT:
Single-walled carbon nanotube transistor and rectifying devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed into the porous structure. A transistor of the invention may be especially suited for power transistor or power amplifier applications.

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