Nanotube growth and device formation

Chemistry of inorganic compounds – Carbon or compound thereof – Elemental carbon

Reexamination Certificate

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C423S447100, C423S447300, C977S742000

Reexamination Certificate

active

07964174

ABSTRACT:
An apparatus and method for forming catalyst particles to grow nanotubes is disclosed. In addition, an apparatus and method for forming nanotubes using the catalytic particles is also disclosed. The particles formed may have different diameters depending upon how they are formed. Once formed, the particles are deposited on a substrate. Once deposited, the mobility of the particles is restricted and nanotubes and/or nanotube portions are grown on the particles. Nanotube portions having different diameters may be formed and the portions may be connected to form nanotubes with different diameters along the length of the nanotube.

REFERENCES:
patent: 3859130 (1975-01-01), Parker et al.
patent: 6333016 (2001-12-01), Resasco et al.
patent: 6413487 (2002-07-01), Resasco et al.
patent: 6737939 (2004-05-01), Hoppe et al.
patent: 6755956 (2004-06-01), Lee et al.
patent: 6838354 (2005-01-01), Goldberg et al.
patent: 6919009 (2005-07-01), Stonas et al.
patent: 7070687 (2006-07-01), Chikarmane et al.
patent: 2005/0042369 (2005-02-01), Mao et al.
patent: 2005/0089467 (2005-04-01), Grill et al.
Dettlaff-Weglikowska et al., Chemical functionalization of single walled carbon nanotubes, 2002, Current Applied Physics, vol. 2, pp. 497-501.
Suh et al., Linearly joined carbon nanotubes, 2001, vol. 123, pp. 381-383.
Y. Li et al., Growth of Single-Walled Carbon Nanotubes from Discrete Catalytic Nanoparticles of Various Sizes, 2001, Journal of Physical Chemistry B, vol. 105, pp. 11424-11431.
Avouris, Phaedon, et al., “Carbon Nanotube Electronics”, 201st ECS Meeting, Philadelphia, PA, Abstract, May 13, 2002 , 52.
Chiu, P. W., et al., “Electrical Transport in metallofullerene nanotube peapods”, 201st ECS Meeting—Philadelphia, PA, Abstract, May 16, 2002, 951.
Choi, G. S., et al., “Carbon nanotubes synthesized by Ni-assisted atmospheric pressure thermal chemical vapor deposition”,Journal of Applied Physics, vol. 91, No. 6, Mar. 15, 2002, 3847-3854.
Gorbunov, A., et al., “Role of the catalyst particle size in the synthesis of single-wall carbon nanotubes”,Applied Surface Science, 197-198, 2002, 563-567.
Grigorian, L., et al., “Transport Properties of alkali-metal-doped single-wall carbon nanotubes”,Physical Review B, Rapid Communications, Third Series, vol. 58, No. 8, PRB 58, Aug. 15, 1998, R4195-R4197.
Kuznetsov, Vladimir L, et al., “Thermodynamic analysis of nucleation of carbon deposits on metal particles and its implications for the growth of carbon nanotubes”,Physical Review B, vol. 64, American Physical Society 2001, 235401-1-235401-7.
Li, Jung, et al., “Growing Y-junction carbon nanotubes”,Nature, vol. 402, Nov. 18, 1999, 253-254.
Martel, R., et al., “Single- and multi-wall carbon nanotube field-effect transistors”,Applied Physics Letters, vol. 73, No. 17, 1998, American Institute of Physics ,Oct. 26, 1998, 2447-2449.
Papadopoulos, C., et al., “Electronic transport in Y-Junction Carbon Nanotubes”,Physical Review Letters, vol. 85, No. 16, American Physical Society, Oct. 16, 2000, 3476-3479.
Resasco, D. E., et al., “A scalable process for production of single-walled carbon nanotubes (SWNTs) by catalytic disproportionation of CO on a solid catalyst”,Journal of Nanoparticle Research 4, accepted in revised form Sep. 17, 2001, 2002, 131-136.
Thess, Andreas, et al., “Crystalline Ropes of Metallic Carbon Nanotubes”,Science, New Series, vol. 273, No. 5274, Jul. 26, 1996 , Title p. 483-487.
Vossen, John L., et al., “Thin Film Processes”, Academic Press, New York III-1.Deposition of Inorganic Films from Solution1978, 212-218, 229-231.

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