Nanotube-based switching elements and logic circuits

Nanotechnology – Specified use of nanostructure – For electronic or optoelectronic application

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C977S940000, C977S762000

Reexamination Certificate

active

07985906

ABSTRACT:
Nanotube-based switching elements and logic circuits are disclosed. Under one embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.

REFERENCES:
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 6314019 (2001-11-01), Kuekes et al.
patent: 6445006 (2002-09-01), Brandes et al.
patent: 6548841 (2003-04-01), Frazier et al.
patent: 6707098 (2004-03-01), Hofmann et al.
patent: 6759693 (2004-07-01), Vogeli et al.
patent: 6803840 (2004-10-01), Hunt et al.
patent: 6809465 (2004-10-01), Jin
patent: 6900479 (2005-05-01), DeHon et al.
patent: 6918284 (2005-07-01), Snow et al.
patent: 6919592 (2005-07-01), Segal et al.
patent: 6919740 (2005-07-01), Snider
patent: 6952358 (2005-10-01), Snider
patent: 6990009 (2006-01-01), Bertin et al.
patent: 7015500 (2006-03-01), Choi et al.
patent: 7115901 (2006-10-01), Bertin et al.
patent: 7115960 (2006-10-01), Bertin et al.
patent: 7161403 (2007-01-01), Bertin
patent: 2001/0023986 (2001-09-01), Mancevski
patent: 2002/0175390 (2002-11-01), Goldstein et al.
patent: 2003/0200521 (2003-10-01), DeHon et al.
patent: 2005/0056877 (2005-03-01), Rueckes et al.
patent: 2006/0237537 (2006-10-01), Empedocles et al.
patent: 2364933 (2002-02-01), None
patent: WO-00/48195 (2000-08-01), None
patent: WO-01/03208 (2001-01-01), None
Avouris, P., “Carbon nanotube electronics,” Chemical Physics 2002, vol. 281, pp. 429-445.
Bachtold, A. et al., “Logic Circuits Based on Carbon Nanotubes,” Physica E 16 (2003, pp. 42-46.
Chen, J. et al., “Self-aligned carbon nanotube transistors with charge transfer doping”,Applied Physics Letters, vol. 86, pp. 123108-1-123108-3, 2005.
Chen, J. et al., “Self-aligned Carbon Nanotube Transistors with Novel Chemical Doping”,IEDM, pp. 29.4.1-29.4.4, 2004.
Derycke, V. et al. “Carbon Nanotube Inter-and Intramolecular Logic Gates.” Nano Letters, vol. 1, pp. 453-456, Sep. 2001.
Derycke, V., “Controlling Doping and Carrier Injection in Carbon NanotubeTransistors”, Applied Physics Letters, 2002. 80 (15) 2773-2775.
Duan, Xiangfeng, “Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires,” Nano Letters, 2002, pp. A-D.
Heinze, S., “Carbon Nanotubes as Schottky Barrier Transistors” Physical Review Letters, 2002. 89 (10) 106801-1-106801-4.
Huang, Y., et al “Logic Gates and Computation from Assembled Nanowire Building Blocks,”Science, Nov. 9, 2001, vol. 294, pp. 1313-1316.
Javey, A. et al., “Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-k Gate Dielectrics”,Nano Letters, vol. 4, No. 3, pp. 447-450, 2004.
Javey, A. et al., “High-k dielectrics for advanced carbon-nanotube transistors and logic gates”,Nature Materials, vol. 1, pp. 241-246, Dec. 2002.
Javey, A., et al., “Carbon Nanotube Transistor Arrays for Multistage Complementary Logic and Ring Oscillators.” Nano Letters, vol. 2, No. 9, pp. 929-932, published on web Jul. 31, 2002.
Lin, Y.M. et al., “Novel Carbon Nanotube FET Design with Tunable Polarity”,IEDM, pp. 29.2.1-29.2.4, 2004.
Martel, R. et al., “Carbon Nanotube Field-Effect Transistors and Logic Circuits”, DAC, 2002. 7.4 94-98.
Radosavljevic, M. et al, “Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors,”Nano Letters, Jun. 1, 2002, vol. 2, No. 7, pp. 761-764.
Rueckes, T. et al, “Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing,”Science, Jul. 7, 2000, vol. 289, pp. 94-97.
Wind, S. J. et al., “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes”,Applied Physics Letters, vol. 80, No. 20, pp. 3817-3819, May 20, 2002.
Wind, S. J., “Fabrication and Electrical Characterization of Top Gate Single-Wall Carbon Nanotube Field-Effect Transistors,” IBM T. J. Watson Research Center, 14 pgs., 2002.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nanotube-based switching elements and logic circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanotube-based switching elements and logic circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanotube-based switching elements and logic circuits will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2703916

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.