Nanotube based multi-level memory structure

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S009000, C438S099000, C427S277000, C427S592000, C428S408000

Reexamination Certificate

active

11513077

ABSTRACT:
A network of electronic devices is provided. The network comprises an organized matrix of armchair nanotubes and zigzag nanotubes.

REFERENCES:
patent: 5223479 (1993-06-01), McCauley, Jr. et al.
patent: 6059627 (2000-05-01), Dean et al.
patent: 6083624 (2000-07-01), Hiura
patent: 6203864 (2001-03-01), Zhang et al.
patent: 6210800 (2001-04-01), Nesper et al.
patent: 6225198 (2001-05-01), Alivisatos et al.
patent: 6306736 (2001-10-01), Alivisatos et al.
patent: 6331690 (2001-12-01), Yudasaka et al.
patent: 6350488 (2002-02-01), Lee et al.
patent: 6538262 (2003-03-01), Crespi et al.
patent: 6559550 (2003-05-01), Herman
patent: 6593166 (2003-07-01), Silverbrook
patent: 6667572 (2003-12-01), Lewis
patent: 6940088 (2005-09-01), Silverbrook
patent: 2004/0096389 (2004-05-01), Lobovsky et al.
patent: 2004/0164327 (2004-08-01), Shin et al.
patent: 07-172807 (1995-07-01), None
patent: WO 95/00440 (1995-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nanotube based multi-level memory structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanotube based multi-level memory structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanotube based multi-level memory structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3895309

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.