Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-10-10
2006-10-10
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S009000, C257S014000
Reexamination Certificate
active
07119357
ABSTRACT:
A multi-level memory structure comprises the junction of a series of metallic type nanotube structures attached to a semiconductive nanotube so that electrons are substantially captured in said junction. In the preferred embodiment, one or more arms of the metallic type nanotube structures include one or more boron nitride bands.
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Picardat Kevin M.
Silverbrook Research Pty Ltd
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