Static information storage and retrieval – Floating gate
Reexamination Certificate
2007-08-28
2007-08-28
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
C257S315000, C257S316000, C257S009000, C257SE51040, C365S151000
Reexamination Certificate
active
11174128
ABSTRACT:
An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage regions. Such a combination enables a combination of low power, low read and write voltages, high charge retention, and high bit density. An embodiment further exhibits a large memory window and a single-electron drain current.
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Ganguly Udayan
Kan Edwin
Zhang Yuegang
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