Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-12-31
2010-06-29
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S017000, C257S014000, C257S022000, C257SE29070, C977S762000
Reexamination Certificate
active
07745813
ABSTRACT:
A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.
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Ohlsson Bjorn Jonas
Samuelson Lars Ivar
Foley & Lardner LLP
Jackson, Jr. Jerome
QuNano AB
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