Nanostructure tailoring of material properties using controlled

Details Nanostructure tailoring of material properties using controlled Nanostructure tailoring of material properties using controlled

1998-03-18

1999-11-30

Kunemund, Robert

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438162, 438166, 438486, 438487, 438488, H01L 21322

Patent

active

059941642

ABSTRACT:
The present invention is generally related to controllably modifying or tailoring the structure of crystalline films to adjust and enhance the material properties of the film, such as optical, mechanical and electrical properties. Crystalline films generally refer to microcrystalline (.mu.c) film, nanocrystalline (nc) film, polycrystalline (poly-c) film, and other crystallized films. The present invention provides a method for controllably obtaining desired grain sizes (or crystal sizes) in crystalline films and for controllably providing a predominance of grains sizes in a predetermined range to adjust and enhance the optical absorption properties of the crystalline film. The present invention also provide a method for controlling the mechanical properties, e.g., stress formation levels, during crystallization of at least a portion of the precursor film. Through control of the stress formation levels, it is possible to controllably adjust and enhance the electrical properties (e.g., doping efficiencies, carrier mobility, Fermi level and minority carrier lifetimes) of the crystallized portion.

REFERENCES:
patent: 4177084 (1979-12-01), Lau et al.
patent: 4490573 (1984-12-01), Gibbons
patent: 4786608 (1988-11-01), Griffith
patent: 5147826 (1992-09-01), Lin et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5365875 (1994-11-01), Asai et al.
patent: 5366926 (1994-11-01), Mei et al.
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5574293 (1996-11-01), Arai et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5773329 (1998-06-01), Kuo
patent: 5837569 (1998-11-01), Makita et al.
patent: 5897347 (1999-04-01), Yamazaki et al.
An article by Meier et al., entitled On The Way Towards High Efficient Thin Film Silicon Solar Cells by the "Micromorph" Concept, Mat. Rex. Soc. Symp. Proc., 420, 3 (1996).
An article by Kuhl et al., entitled Optical Investigation of Different Silicon Films, J.Electrochem.Soc., 121, 1496 (1974).
An article by Iqbal et al., entitled Optical Absorption in Hydrogenated Microcrystalline Silicon, J. Phys. C., 16, 2005 (1983).
An article by Richter et al, entitled Optical Properties and Transport in Microcrystalline Silicon Prepared at Temperatures Below 400.degree. C., J, Appl. Phys., 52, 7281 (1981).
An article by Beck et al., entitled Enhanced Optical Absorption in Microcrystalline Silicon, J. Non-Cryst. Solids, 198-200, 903-906 (1996).
An article by Meier et al., entitled Complete Microcrystalline P-I-N Solar Cell-Crystalline or Amorphous Cell Behavior?, Appl. Phys. Lett. 65(7) (1994).

Affiliated with

Also associated with

Rating

Nanostructure tailoring of material properties using controlled does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanostructure tailoring of material properties using controlled , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanostructure tailoring of material properties using controlled will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1671015