Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-08-03
2011-11-15
Gebremariam, Samuel (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S773000, C257SE29120, C257SE51002, C977S721000, C977S932000
Reexamination Certificate
active
08058644
ABSTRACT:
A nanostructure pattern which includes pairs of metal lines separated by identical gaps whose dimensions are in the nanometer range, can be prepared by providing a separating sacrificial layer, whose dimensions can be controlled precisely, in the separation gap between the first metal line and the second metal line. The sacrificial layer is removed at the end of the fabrication, leaving a precisely dimensioned gap between the lines.
REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 6699779 (2004-03-01), Chen et al.
patent: 2003/0186167 (2003-10-01), Johnson, Jr. et al.
patent: 2005/0112860 (2005-05-01), Park et al.
Publication WO 2004/012234 A2 of International application PCT/US2003/023546. 36 double-sided pages.
Qi; Li dong, Park; Sungho, Huang; Ling, Mirkin; Chad A., “On-Wire Lithography”, Science, vol. 309, Jul. 1, 2005, pp. 113-115.
Guillorn et al., “Fabrication of dissimilar metal electrode with nanometer interelectrode distance for molecular electronic device characterization”, 2000 American Vacuum Society, J. Vac. Sci. Technol. B 18(3) May/Jun. 2000, pp. 1177-1181.
Gusev et al., “High-resolution depth profiling in ultrathin A12O3films on Si”, 2000 American Institute of Physics, vol. 76, No. 2, Jan. 10, 2000, pp. 176-178.
Kelly; Roberta, “Electron Beam Lithography”, WATLabs Group Meetings, Univ. of Waterloo, Waterloo, Canada, 19 pages, and 4 pgs. Index, Jun. 27, 2003.
Saifullah et al., “A reliable scheme for fabricating sub-5 nm co-planar junctions for molecular electronics”, Nanoscale Sci. Lab., Dept. of Engineer., Cambridge Univ., U.K. and CEMES-CNRS, France, 11 pages, including Refs. (Fischer et al., Appl. Phys. Lett. 62, 2989) (1993) and (Figs 1-4).
Wilk et al., “High-kgate dielectrics: Current status and materials properties considerations”, 2001 American Institue of Physics, vol. 89, No. 10, May 15, 2001, pp. 5243-5275.
ISA-The Instrumentation, Systems and Automation Society,OWL Etches Out Nano Wires, Jul. 6, 2005 ISA Network, Your Online Connection.
Arena Andrew O.
Arendt Jacqueline
Arendt & Associates IP Group
Gebremariam Samuel
LandOfFree
Nanostructure for molecular electronics comprising collinear... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nanostructure for molecular electronics comprising collinear..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanostructure for molecular electronics comprising collinear... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4305272