Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-03-25
2008-03-25
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C977S762000, C977S893000
Reexamination Certificate
active
10533565
ABSTRACT:
Cylinders having Al as a major constituent are orderly arrayed in an (Si, Ge) matrix. In a nanostructure in the form of a mixture film having a plurality of cylinders having Al as a major constituent, and a matrix region surrounding the plurality of cylinders and having Si and/or Ge as a major constituent, the total amount of Si and Ge is in the range from 20 to 70 atomic % in the mixture film, the cylinders are orderly arrayed, the diameter of the cylinders is in the range from 1 to 30 nm, and the interval between the cylinders is 30 nm or less.
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Den Tohru
Fukutani Kazuhiko
Canon Kabushiki Kaisha
Coleman W. David
Fitzpatrick ,Cella, Harper & Scinto
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