Nanosilicon light-emitting element and manufacturing method...

Details Nanosilicon light-emitting element and manufacturing method... Nanosilicon light-emitting element and manufacturing method...

2006-11-07

2006-11-07

Picardat, Kevin M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S089000, C257S103000

Reexamination Certificate

active

07132692

ABSTRACT:
An object of the present invention is to allow the three primary colors of light (red, green, blue) to be emitted, and particularly to allow blue light to be emitted clearly and in a stable manner at a low voltage. An amorphous SiOxfilm2consisting of a mixture of silicon atoms and oxygen atoms is formed on a semiconductor substrate1. The result is heat treated in an inert gas to form the silicon atoms into nanosilicon4aof about 3.0 nm or less. The result is subjected to hydrofluoric acid aqueous solution treatment5and thermal oxidation treatment6. Any of the three primary colors of light, particularly blue, can be emitted at a low operating voltage7at room temperature.

REFERENCES:
patent: 6103540 (2000-08-01), Russell et al.
patent: 7-237995 (1995-09-01), None

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