Nanosecond RF switch driver

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307571, 307578, 307246, 307471, 333258, 333262, H03K 301, H03K 17687, H03K 1756, H01P 110

Patent

active

052143155

ABSTRACT:
An extremely fast high-voltage driver for nanosecond-level switching of gallium arsenide PIN semiconductor devices and other reactive loads utilizes two stages of voltage level translation to permit low voltage TTL logic control signals to control the application of high voltage switching pulses to a load. The circuit utilizes an input stage responsive to TTL level signals to drive a first voltage level translating stage which produces high voltage pulses complementary to the input pulses. The increased voltage pulses are supplied through an intermediate power gain stage to provide amplification of the pulse power level. The amplified pulse is supplied to an output stage for additional level conversion to thereby provide high voltage switching signals to a PIN switch or other reactive load.

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