Nanoscale programmable structures and methods of forming and...

Details Nanoscale programmable structures and methods of forming and... Nanoscale programmable structures and methods of forming and...

2007-11-13

2007-11-13

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S350000, C257S359000, C257S379000, C257S536000, C257SE21350, C977S810000, C977S831000, C977S943000, C365S148000

Reexamination Certificate

active

11151904

ABSTRACT:
A programmable structure and device and methods of forming and using the structure and device are disclosed. The structure includes a soluble electrode, an ion conductor, and an inert electrode. Upon application of a sufficient voltage, a conductive region forms within or on the ion conductor and between the electrodes. The presence or absence of the conductive region can be used to store information in memory devices.

REFERENCES:
patent: 6528816 (2003-03-01), Jackson et al.
patent: 7022579 (2006-04-01), Li et al.
patent: 2002/0117599 (2002-08-01), Domeier et al.
patent: 2002/0168820 (2002-11-01), Kozicki et al.
patent: 2005/0101084 (2005-05-01), Gilton

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