Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2007-05-22
2007-05-22
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C438S497000, C977S762000, C977S789000
Reexamination Certificate
active
10726016
ABSTRACT:
A nanoscale junction array includes an elongated nanowire and a plurality of elongated nanobelts. Each nanobelt has a proximal end and an opposite distal end. The proximal end of each nanobelt is attached to a different location on the nanowire. Each nanobelt extends radially away from the nanowire. A type of nanoscale junction array, a nanopropeller, includes an elongated nanowire and a plurality of elongated nanoblades. The nanoscale junction array is formed from Zinc Oxide using a metal vaporization process.
REFERENCES:
Gautam, et al, “Controlled synthesis of crystalline tellurium nanorods, nanowires, nanobelts and related structures by a self-seeding solution”, Journal or Materials Chemistry(2004), 14(16), pp. 2530-2535 (Abstract only).
Gao Pu X.
Wang Zhong L.
Bockhop Bryan W.
Bockhop & Associates LLC
Georgia Tech Research Corporation
Hiteshew Felisa
LandOfFree
Nanoscale junction arrays and methods for making same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nanoscale junction arrays and methods for making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanoscale junction arrays and methods for making same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3822443