Nanoporous semiconductor material and fabrication technique for

Details Nanoporous semiconductor material and fabrication technique for Nanoporous semiconductor material and fabrication technique for

1993-09-20

1998-11-10

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

257930, H01L 2906, H01L 2338, H01L 2716, H01L 3500

Patent

active

058348280

ABSTRACT:
A nanoporous semiconductor material and fabrication technique for use as rmoelectric elements. Starting precursors are mixed in solution so as to thoroughly dissolve in solution which is then reduced. A second phase may be added in solution to provide nanoinclusions which may be subsequently removed. A nanoporous semiconductor is formed whereby lattice thermal conductivity is greatly reduced, due to enhanced phonon scattering on the order of 10 W/cm.multidot..degree.K. The nanoporous semiconductor material may be used as the n- and p- legs in a Peltier couple utilized for a thermoelectric cooler, a cryogenic cooler, thermoelectric power generator, or a thermoelectric heat pump.

REFERENCES:
patent: 4718249 (1988-01-01), Hanson
patent: 5168339 (1992-12-01), Yokotani et al.

Affiliated with

Also associated with

Rating

Nanoporous semiconductor material and fabrication technique for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanoporous semiconductor material and fabrication technique for , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanoporous semiconductor material and fabrication technique for will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1519240