Nanopore forming material for forming insulating film for...

Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – Mixing of two or more solid polymers; mixing of solid...

Reexamination Certificate

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C521S061000, C528S423000

Reexamination Certificate

active

07091287

ABSTRACT:
The present invention relates to a nanopore-forming material for forming an insulating film for a semiconductor device, and more particularly to a nanopore-forming organic material containing a triazine functional group and preparation thereof, and a composition for forming an insulating film for a semiconductor device comprising the same, an insulating film using the same, and a manufacturing process thereof.The pore-forming material of the present invention is easy to synthesize, and the molecular weight, molecular structure, and microenvironment thereof are easy to control, and thus it is suitable for a nanopore-forming material.

REFERENCES:
patent: 5700844 (1997-12-01), Hedrick et al.
patent: 5810912 (1998-09-01), Akiyama et al.
patent: 6126733 (2000-10-01), Wallace et al.
patent: 6271273 (2001-08-01), You et al.
patent: 6391932 (2002-05-01), Gore et al.
patent: 6420441 (2002-07-01), Allen et al.
patent: 6743471 (2004-06-01), Ko et al.
patent: 6806161 (2004-10-01), Ko et al.
Advanced Materials; Research News; “Templating Nanoporosity in Thin-Film Dielectric Insulators”; Authors: James L. Hedrick, Robert D. Miller, Craig J. Hawker, Kenneth R. Carter, Willi Volksen, Do Y. Yoon and Mikael Trollsas; pp. 1049-1053; 1998.

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