Nanometer-scale silicon-on-insulator photonic componets

Details Nanometer-scale silicon-on-insulator photonic componets Nanometer-scale silicon-on-insulator photonic componets

1997-02-28

1998-11-17

Palmer, Phan T. H.

Optical waveguides

Planar optical waveguide

Thin film optical waveguide

385130, 385132, 257347, G02B 610

Patent

active

058388702

ABSTRACT:
Nanometer scale silicon-on-insulator (SOI) guided-wave optical components in the near infra-red employ an SOI platform for optical isolation, and single mode silicon strip etched into the buried oxide. A multi-layer core for the strip consistes of several 1-3 nanometer crystal silicon multiple quantum wells confined by wide bandgap epitaxial barriers. The MQW region of the strip employs intersubband or band-to-band photonic effects. Active strip microcavities use a photonic bandgap resonator of etched air cylinders, or two sets of etched slot Bragg grating reflectors. Many thousands of these components can be integrated on a Si chip.

REFERENCES:
patent: 4877299 (1989-10-01), Lorenzo et al.
patent: 4996575 (1991-02-01), Ipri et al.
patent: 5448513 (1995-09-01), Hulet et al.
patent: 5514885 (1996-05-01), Myrick
patent: 5559912 (1996-09-01), Agahi et al.

Affiliated with

Also associated with

Rating

Nanometer-scale silicon-on-insulator photonic componets does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanometer-scale silicon-on-insulator photonic componets, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanometer-scale silicon-on-insulator photonic componets will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-893780