Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing
Reexamination Certificate
2006-08-15
2006-08-15
Cooke, Colleen P. (Department: 1754)
Chemistry of inorganic compounds
Silicon or compound thereof
Oxygen containing
C423S324000, C423S337000, C257S414000
Reexamination Certificate
active
07090815
ABSTRACT:
A method of forming a catalyst body by forming a first layer of hemispherical grain polysilicon over a substrate, and oxidizing at least a portion of the first layer to form a second layer of silica. Additionally, forming a third layer of nitride material over the second layer, and forming a catalyst material over the nitride layer, can be performed before annealing to form a catalyst body.
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Hu Yongjun Jeff
Ping Er-Xuan
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