Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2007-01-02
2007-01-02
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S172000, C438S174000, C438S718000
Reexamination Certificate
active
10725257
ABSTRACT:
A heterostructure comprising: a buffer layer; a bottom barrier layer formed on the buffer layer; a quantum well layer formed on the bottom barrier layer; a top barrier layer formed on the quantum well layer; and a p-doped cap layer formed on the top barrier layer; wherein a portion of the cap layer is etched to form conducting electrons in the quantum well layer below the etched portion of the cap layer. A method of etching comprising the steps of: providing a heterostructure; providing an etchant solution comprising acetic acid, hydrogen peroxide, and water; and contacting the etchant solution to the heterostructure to etch the heterostructure.
REFERENCES:
patent: 5349214 (1994-09-01), Tehrani et al.
patent: 5789540 (1998-08-01), Krstenansky et al.
patent: 2002/0119661 (2002-08-01), Watanabe et al.
patent: 2004/0101988 (2004-05-01), Roman et al.
Yang Chia-Hung
Yang Ming-Jey
Grunkemeyer Joseph T.
Karasek John J.
The United States of America as represented by the Secretary of
Thomas Toniae M.
Wilczewski M.
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