Nanofabricated structures having a region of changeable conducti

Details Nanofabricated structures having a region of changeable conducti Nanofabricated structures having a region of changeable conducti

1997-01-03

1998-06-09

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 30, 257734, 2504922, 2504923, H01L 21283, H01L 2352, H01J 3730

Patent

active

057639337

ABSTRACT:
A method of forming a nano-scale device with a probe such as a STM on a substrate includes the step of rendering the relevant part of the substrate conductive whilst the device is being formed with the probe so that current can flow from the probe to the substrate. Thereafter, to operate the device, the substrate is rendered non-conductive so as to prevent dissipation of current from the device through the substrate. The substrate can be altered in conductivity by cooling to undergo a Mott transition, can be heated from a normally non-conductive condition to become conductive, or subject to laser radiation to induce charge carriers to render it conductive.

REFERENCES:
patent: 4539089 (1985-09-01), Binning et al.
patent: 5049461 (1991-09-01), Arnett et al.
patent: 5126574 (1992-06-01), Gallagher
patent: 5214298 (1993-05-01), Yuan et al.
Ehrichs et al., Fabrication of Nanometer Features with a Scanning Tunneling Microscope, Proc. of the Int. Symp. on Nanostructure Physics and Fabrication, Texas, Mar. 15-18, 1989, No page numbers provided.

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