Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-05-27
1996-01-16
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 14, 257 21, 257187, 257192, H01L 2906, H01L 310328, H01L 310336
Patent
active
054850185
ABSTRACT:
A nanofabricated logic device, operable at multiple (more than two) logic levels comprises asymmetrically coupled quantum point contacts provided with respective sources and drains and a coupling region between gate electrodes. The quantum mechanical carrier wavefunction in the region of QPC1, 2 is spatially asmmetric with alternate quantised energy levels lying either in QPC1, or QPC2, so that by changing the energy level, the conductance of the device can be switched between multiple stable conductance levels. The device can be used to provide a multilevel output switched in response to terahertz pulses provided by an array of optical detectors.
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High-Speed Semiconductor Devices, ed. S. M. Sze, by F. Capasso et al. (John Wiley & Sons, New York 1990): Quantum Effect Devices, Chap. 8, pp. 465-520.
Allam Jeremy
Ogawa Kensuke
Hitachi , Ltd.
Saadat Mahshid
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