Nanoelectronic structure and method of producing such

Details Nanoelectronic structure and method of producing such Nanoelectronic structure and method of producing such

2007-06-15

2011-11-01

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S013000, C257S017000, C257SE29070, C257SE29245, C977S762000, C977S938000

Reexamination Certificate

active

08049203

ABSTRACT:
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

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