Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Patent
1994-12-01
1996-12-03
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
257 30, 257 49, 257594, 257622, 257773, 437 71, 437188, 437203, 437205, H01L 2906, H01L 21302
Patent
active
055810918
ABSTRACT:
Single-electron devices useful as diodes, transistors or other electronic components are prepared by anodizing a metal substrate in sheet or foil form electrolytically in an acid bath, to deposit thereon an oxide film having axially disposed micropores of substantially uniform diameter in the range of from about 1 to about 500 nanometers and substantially uniform depth less than the thickness of the oxide film, leaving an ultra thin oxide layer between the bottom of each pore in the metal substrate. The conductive material is deposited in the pores to form nanowires contacting the oxide layer at the bottom of the pores. Macro metal is deposited over the ends of the nanowires for external electrical contact purposes. Devices can be made according to the present invention which are suitable to exhibit single-electron tunnelling effects and arrays of tunnel junction devices can be prepared having a density up to the order of 10.sup.10 per square cm.
REFERENCES:
patent: 4472533 (1984-09-01), Moskovits
patent: 5420746 (1995-05-01), Smith
patent: 5475341 (1995-12-01), Reed
"Single Electronics", Scientific American, Jun. 1992, Likharev pp. 80-85.
1993 International Semiconductor Device Research Symposium Dec. 1-3, 1993, Virginia vol. 1, 311-312a, Mawlawi et al.
Moskovits Martin
Xu Jing M.
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