Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2007-12-04
2007-12-04
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S087000, C117S089000, C117S094000, C117S095000
Reexamination Certificate
active
10887013
ABSTRACT:
Disclosed herein are nanostructures comprising distinct dots and rods coupled through potential barriers of tuneable height and width, and arranged in three dimensional space at well defined angles and distances. Such control allows investigation of potential applications ranging from quantum information processing to artificial photosynthesis.
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Alivisatos A. Paul
Hughes Steven M.
Manna Liberato
Milliron Delia
Caron R'Sue P.
Kunemund Robert
Lawrence Berkeley National Laboratory
The Regents of the University of California
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