Nano-structure memory device

Details Nano-structure memory device Nano-structure memory device

1995-09-29

1998-02-03

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 20, 257 22, 257 24, 365174, 365182, H01L 2906, H01L 310328, H01L 310336

Patent

active

057147663

ABSTRACT:
A memory device and memory incorporating a plurality of the memory devices is described wherein each memory device has spaced apart source and drain regions, a channel, a barrier insulating layer, a nanocrystal or a plurality of nanocrystals, a control barrier layer, and a gate electrode. The nanocrystal which may be a quantum dot, stores one electron or hole or a discrete number of electrons or holes at room temperature to provide threshold voltage shifts in excess of the thermal voltage for each change in an electron or a hole stored. The invention utilizes Coulomb blockade in electrostatically coupling one or more stored electrons or holes to a channel while avoiding in-path Coulomb-blockade controlled conduction for sensing the stored charge.

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Nicollian et al., "Electrical properties of a silicon quantum dot diode", J. Appl. Phys. 74, 4020 (1993).
K. Yano et al., "A room-temperature single-electron memory device using a fine-grain polycrystalline silicon", Dig. of Int'l Electron Dev. Mtg, Dec. 1993, Washington D. C., p. 541.
K. Bock et al., "Proposal for the concept of ultradense integrated memories based on Coulomb blockade at room temperature", Electron Letters, 29, 2228 (1993).
Likharev et al., "Single Electronics" Scientific American, Jun. 1992, pp. 80-85.
Wind et al., "Computer take a quantum leap", BYTE, vol. 17, No. 2, Feb. 1992, McGraw Hill, Inc., p. 140.
Matsuoka et al., "Coulomb Blockade in the inversion layer of a Si metal-oxide-semiconductor field-effect transistor with a dual-gate structure", Appl. Phys. Lett. 64, 586, Jan. 1994.

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