Nano-scaled gate structure with self-interconnect capabilities

Details Nano-scaled gate structure with self-interconnect capabilities Nano-scaled gate structure with self-interconnect capabilities

2006-10-03

2006-10-03

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S331000, C257S341000, C257S365000, C257S366000, C257S367000, C438S193000, C438S195000, C438S284000

Reexamination Certificate

active

07115921

ABSTRACT:
Gate conductors on an integrated circuit are formed with enlarged upper portions which are utilized to electrically connect the gate conductors with other devices. A semiconductor device comprises a gate conductor with an enlarged upper portion which electrically connects the gate conductor to a local diffusion region. Another semiconductor device comprises two gate conductors with enlarged upper portions which merge to create electrically interconnected gate conductors. Methods for forming the above semiconductor devices are also described and claimed.

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