Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2011-04-19
2011-04-19
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S186000, C257S199000, C257S481000, C257S603000, C257SE21357
Reexamination Certificate
active
07928533
ABSTRACT:
An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.
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Cunningham Thomas J.
Pain Bedabrata
Zheng Xinyu
California Institute of Technology
Pert Evan
Steinfl & Bruno LLP
Wilson Scott
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