Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-05-14
2010-02-09
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S255000, C438S706000, C438S722000
Reexamination Certificate
active
07659210
ABSTRACT:
A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant.
REFERENCES:
patent: 5731130 (1998-03-01), Tseng
patent: 6245650 (2001-06-01), Watanabe
patent: 6444512 (2002-09-01), Madhukar et al.
patent: 6764896 (2004-07-01), Okudaira
patent: 7125762 (2006-10-01), Brask et al.
patent: 7125770 (2006-10-01), Lee
patent: 7163862 (2007-01-01), Wiseman et al.
patent: 7358138 (2008-04-01), Lee
patent: 2002/0011465 (2002-01-01), Yamamoto et al.
patent: 2004/0180491 (2004-09-01), Arai et al.
patent: 2005/0287717 (2005-12-01), Heald et al.
patent: 2006/0040103 (2006-02-01), Whiteford et al.
patent: 2006/0081911 (2006-04-01), Batra et al.
patent: 2006/0266442 (2006-11-01), Narayan et al.
patent: 2006/0278917 (2006-12-01), Forbes et al.
patent: 2007/0007635 (2007-01-01), Forbes et al.
patent: 2007/0010061 (2007-01-01), Forbes et al.
Loyd Case, “Intel Takes Wraps 0ff 45 nm Penryn”, Jan. 26, 2007, www.channelinsider.com.
Kavalieros et al., “Tri-Gate Transister Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering”, Components Research, Technology and Manufacturing Group, Intel Corporation.
Barnett et al., Cleaning's Role in High-k/Metal Gate Success, Semiconductor International, Feb. 1, 2006.
Alapati Ramakanth
Hineman Max
Morgan Paul
Dinsmore & Shohl LLP
Micro)n Technology, Inc.
Vinh Lan
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