Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-08-28
2007-08-28
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185180, C365S185190, C365S185290
Reexamination Certificate
active
11378273
ABSTRACT:
A nonvolatile semiconductor memory device is provided having a plurality of electrically rewritable nonvolatile memory cells connected in series together. A select gate transistor is connected in series to the serial combination of memory cells. A certain one of the memory cells which is located adjacent to the select gate transistor is for use as a dummy cell. This dummy cell is not used for data storage. During data erasing, the dummy cell is applied with a different bias voltage as that for the other memory cells.
REFERENCES:
patent: 5524094 (1996-06-01), Nobukata et al.
patent: 5815436 (1998-09-01), Tanaka et al.
patent: 6011287 (2000-01-01), Itoh et al.
patent: 6055181 (2000-04-01), Tanaka et al.
patent: 6188608 (2001-02-01), Maruyama et al.
patent: 6222774 (2001-04-01), Tanzawa et al.
patent: 3-295098 (1991-12-01), None
patent: 09-167807 (1997-06-01), None
patent: 09-232454 (1997-09-01), None
patent: 11-86571 (1999-03-01), None
patent: 11-353884 (1999-12-01), None
patent: 2000-022113 (2000-01-01), None
patent: 2000-285692 (2000-10-01), None
patent: 2001-084788 (2001-03-01), None
Hazama Hiroaki
Ootani Norio
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