Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2005-08-16
2005-08-16
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S198000
Reexamination Certificate
active
06930919
ABSTRACT:
A NAND-type flash memory device including a memory cell array having a plurality of memory blocks is provided. An example NAND-type flash memory device includes a status cell array which has a plurality of status cells and stores data indicating erase/program statuses of the memory blocks, a data generation circuit which generates data indicating a program status of a selected memory block in response to a data input command and generates data indicating an erase status of a selected memory block in response to a block erase setup command, a first signal generation circuit which generates a block status write enable signal and a clock signal in response to either one of an erase command and a program command, a selection circuit which selects at least one of the status cells of the status cell array in response to a block address of the selected memory block, a write circuit which receives data from the data generation circuit in response to the clock signal during a program or erase operation and writes the received data in the selected status cell, and a control circuit which operates in response to a block status write enable signal from the first signal generation circuit and controls the write circuit so as to the store the data inputted to the write circuit in a selected status cell when an erase/program operation for the selected memory block is carried out.
REFERENCES:
patent: 5844843 (1998-12-01), Matsubara et al.
patent: 6061270 (2000-05-01), Choi
patent: 6335881 (2002-01-01), Kim et al.
patent: 6735116 (2004-05-01), Lee et al.
patent: 2004/0042272 (2004-03-01), Kurata
Lee Jin-Yub
Park Min-Gun
Youn Dong-Kyu
Le Thong Q.
Marger & Johnson & McCollom, P.C.
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