Static information storage and retrieval – Floating gate – Particular biasing
Patent
1992-06-26
1994-03-15
Dixon, Joseph L.
Static information storage and retrieval
Floating gate
Particular biasing
365218, 365900, G11C 1134
Patent
active
052950964
ABSTRACT:
An improved NAND type EEPROM is disclosed, in which one selecting transistor and a plurality of memory transistors constituting one memory block are connected in series, a tunnel region for writing/erasing signal charges is isolated from a read transistor region for reading presence/absence of stored charge in each of the memory transistors. The plurality of memory transistors share one selecting transistor and the read transistor region and the selecting transistor region are isolated from each other, so that the memory block can be made small and the threshold values of the plurality of memory transistors are not influenced by the number of the memory transistors.
REFERENCES:
patent: 4580247 (1986-04-01), Adam
patent: 4939690 (1990-07-01), Momodomi et al.
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 4962481 (1990-10-01), Choi et al.
Gupta et al, "5-V-only EEPROM," Electronics, vol. 51, No. 3 Feb. 10, 1982, pp. 121-125.
"A High Density EPROM Cell and Array" by Stewart et al., Symposium on VSLI Tech. Digest of Technical Papers, May 1986, VII-9, pp. 89-90.
"New Ultra High Density EPROM and Flash EEPROM with NAND Structure Cell" by Masuoka et al, IEDM Technical Digest, Dec. 1987 pp. 552-555.
"A New NAND Cell for Ultra High Density 5V-Only EEPROMs", R. Shirota et al, Digest of Technical Papers of the Symposium on VLSI Technology. May 10, 1988.
Dixon Joseph L.
Mitsubishi Denki & Kabushiki Kaisha
Whitfield Michael A.
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