NAND memory device column charging

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S205000

Reexamination Certificate

active

07436708

ABSTRACT:
Embodiments of NAND Flash memory devices and methods recognize that effective column coupling capacitance can be reduced by maintaining a sourced voltage on adjacent columns of an array. Maintaining the columns in a charged state prior to array operations (read, write, and program) reduces current surges and improves data read timing. Devices and methods charge the array columns at pre-charge and following array access operations.

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