Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-08-09
2011-08-09
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185230
Reexamination Certificate
active
07995399
ABSTRACT:
A NAND Flash memory device reduces circuitry noise during program operations. The memory includes bit lines that are electrically coupled together to charge share their respective voltage potentials prior to performing a discharge operation on the bit lines. A NAND flash cell is programmed by coupling a first memory array bit line to a program voltage to program the memory cell, biasing a second memory array bit line to a ground potential, wherein the second memory array bit line is located adjacent to the first memory array bit line, activating at least one first transistor to electrically coupling the first and second memory array bit lines together, and activating at least one second transistor to electrically couple the first and second memory array bit lines to a discharge potential.
REFERENCES:
patent: 5001369 (1991-03-01), Lee
patent: 5097149 (1992-03-01), Lee
patent: 5604714 (1997-02-01), Manning et al.
patent: 5640364 (1997-06-01), Merrit et al.
patent: 5680595 (1997-10-01), Thomann et al.
patent: 5729169 (1998-03-01), Roohparvar
patent: 5808338 (1998-09-01), Gotou
patent: 6088264 (2000-07-01), Hazen et al.
patent: 6282132 (2001-08-01), Brown et al.
patent: 6584035 (2003-06-01), Di lorio et al.
patent: 6586979 (2003-07-01), Gromm et al.
patent: 6958940 (2005-10-01), Takase et al.
patent: 6975538 (2005-12-01), Abedifard et al.
patent: 6977842 (2005-12-01), Nazarlan
patent: 7359243 (2008-04-01), Ha
patent: 7388789 (2008-06-01), Ha
patent: 2002/0101288 (2002-08-01), Su et al.
patent: 2004/0240269 (2004-12-01), Cernea
patent: 2005/0009362 (2005-01-01), Nishida et al.
patent: 2005/0024134 (2005-02-01), Bolz et al.
patent: 2005/0232012 (2005-10-01), Park
Micro)n Technology, Inc.
Nguyen Hien N
Nguyen Vanthu
Schwegman Lundberg & Woessner, P.A.
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