NAND memory cell at initializing state and initializing...

Details NAND memory cell at initializing state and initializing... NAND memory cell at initializing state and initializing...

2006-09-08

2008-12-16

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185220

Reexamination Certificate

active

07466589

ABSTRACT:
The invention is directed to a NAND memory cell at an initializing state. The NAND memory cell at the initializing state comprises a substrate, a gate, at least two doped regions, a carrier storage element and a plurality of carriers. The substrate has at least two isolation structures formed therein and the isolation structures are parallel to each other. The gate is disposed over the substrate and across the isolation structures. The doped regions are disposed at both sides of the gate in the substrate between the isolation structures respectively. The carrier storage element is disposed between the substrate and the gate. The carriers are disposed in the carrier storage elements and aggregating above the edges of the isolation structures.

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