Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2007-06-19
2007-06-19
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Floating gate
Disturbance control
C365S185110, C365S185170, C365S185180, C365S185240, C365S185280
Reexamination Certificate
active
10729831
ABSTRACT:
An exemplary NAND string memory array provides for capacitive boosting of a half-selected memory cell channel to reduce program disturb effects of the half selected cell. To reduce the effect of leakage current degradation of the boosted level, multiple programming pulses of a shorter duration are employed to limit the time period during which such leakage currents may degrade the voltage within the unselected NAND strings. In addition, multiple series select devices at one or both ends of each NAND string further ensure reduced leakage through such select devices, for both unselected and selected NAND strings. In certain exemplary embodiments, a memory array includes series-connected NAND strings of memory cell transistors having a charge storage dielectric, and includes more than one plane of memory cells formed above a substrate.
REFERENCES:
patent: 4142176 (1979-02-01), Dozier
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 4602354 (1986-07-01), Craycraft et al.
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 4868616 (1989-09-01), Johnson et al.
patent: 5197027 (1993-03-01), Challa
patent: 5299166 (1994-03-01), Suh et al.
patent: 5301144 (1994-04-01), Kohno
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5429968 (1995-07-01), Koyama
patent: 5473563 (1995-12-01), Suh et al.
patent: 5514907 (1996-05-01), Moshayedi
patent: 5568421 (1996-10-01), Aritome
patent: 5621683 (1997-04-01), Young
patent: 5621684 (1997-04-01), Jung
patent: 5644533 (1997-07-01), Lancaster et al.
patent: 5682350 (1997-10-01), Lee et al.
patent: 5703382 (1997-12-01), Hack et al.
patent: 5715194 (1998-02-01), Hu
patent: 5729491 (1998-03-01), Kim et al.
patent: 5734609 (1998-03-01), Choi et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: RE35838 (1998-07-01), Momodomi et al.
patent: 5812457 (1998-09-01), Arase
patent: 5814853 (1998-09-01), Chen
patent: 5835396 (1998-11-01), Zhang
patent: 5898615 (1999-04-01), Chida
patent: 5909393 (1999-06-01), Tran et al.
patent: 5923587 (1999-07-01), Choi
patent: 5926415 (1999-07-01), Shin
patent: 5940321 (1999-08-01), Takeuchi et al.
patent: 5969990 (1999-10-01), Arase
patent: 5978265 (1999-11-01), Kirisawa et al.
patent: 5991202 (1999-11-01), Derhacobian et al.
patent: 6005270 (1999-12-01), Noguchi
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6049494 (2000-04-01), Sakui et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6061270 (2000-05-01), Choi
patent: 6107658 (2000-08-01), Itoh et al.
patent: 6108238 (2000-08-01), Nakamura et al.
patent: 6115287 (2000-09-01), Shimizu et al.
patent: 6118696 (2000-09-01), Choi
patent: 6147911 (2000-11-01), Takeuchi et al.
patent: 6151249 (2000-11-01), Shirota et al.
patent: 6157056 (2000-12-01), Takeuchi et al.
patent: 6163048 (2000-12-01), Hirose et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6188611 (2001-02-01), Endoh et al.
patent: 6266275 (2001-07-01), Chen et al.
patent: 6291836 (2001-09-01), Kramer et al.
patent: 6295227 (2001-09-01), Sakui et al.
patent: 6301155 (2001-10-01), Fujiwara
patent: 6307807 (2001-10-01), Sakui et al.
patent: 6326269 (2001-12-01), Jeng et al.
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6373095 (2002-04-01), Bracchitta et al.
patent: 6373746 (2002-04-01), Takeuchi et al.
patent: 6380636 (2002-04-01), Tatsukawa et al.
patent: 6411548 (2002-06-01), Sakui et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6434053 (2002-08-01), Fujiwara
patent: 6445613 (2002-09-01), Nagai
patent: 6456528 (2002-09-01), Chen
patent: 6469933 (2002-10-01), Choi et al.
patent: 6473328 (2002-10-01), Mercaldi
patent: 6477077 (2002-11-01), Okazawa
patent: 6490194 (2002-12-01), Hoenigschmid
patent: 6498747 (2002-12-01), Gogl et al.
patent: 6512694 (2003-01-01), Herdt
patent: 6512703 (2003-01-01), Sakui et al.
patent: 6515888 (2003-02-01), Johnson et al.
patent: 6522583 (2003-02-01), Kanda et al.
patent: 6542407 (2003-04-01), Chen et al.
patent: 6545898 (2003-04-01), Scheuerlein
patent: 6567287 (2003-05-01), Scheuerlein
patent: 6567312 (2003-05-01), Torii et al.
patent: 6570787 (2003-05-01), Wang et al.
patent: 6584006 (2003-06-01), Viehmann
patent: 6597609 (2003-07-01), Chevallier
patent: 6611453 (2003-08-01), Ning
patent: 6614070 (2003-09-01), Hirose et al.
patent: 6614688 (2003-09-01), Jeon et al.
patent: 6618292 (2003-09-01), Sakui
patent: 6621743 (2003-09-01), Ogane
patent: 6654281 (2003-11-01), Georgakos et al.
patent: 6661707 (2003-12-01), Choi et al.
patent: 6671204 (2003-12-01), Im
patent: 6735115 (2004-05-01), Hsu et al.
patent: 6747899 (2004-06-01), Hsia et al.
patent: 6757196 (2004-06-01), Tsao et al.
patent: 6765813 (2004-07-01), Scheuerlein et al.
patent: 6819593 (2004-11-01), Shyu et al.
patent: 6822903 (2004-11-01), Scheuerlein et al.
patent: 6845030 (2005-01-01), Kang et al.
patent: 6845042 (2005-01-01), Ichige et al.
patent: 6849905 (2005-02-01), Ilkbahar et al.
patent: 6853587 (2005-02-01), Forbes
patent: 6856572 (2005-02-01), Scheuerlein et al.
patent: 6859395 (2005-02-01), Matsunaga et al.
patent: 6859410 (2005-02-01), Scheuerlein et al.
patent: 6888755 (2005-05-01), Harari
patent: 6982902 (2006-02-01), Gogl et al.
patent: 7012835 (2006-03-01), Gonzalez et al.
patent: 7023739 (2006-04-01), Chen et al.
patent: 2001/0055838 (2001-12-01), Walker et al.
patent: 2002/0021587 (2002-02-01), Sakui et al.
patent: 2002/0028541 (2002-03-01), Lee et al.
patent: 2003/0095448 (2003-05-01), Ichige et al.
patent: 2003/0109093 (2003-06-01), Harari et al.
patent: 2003/0155582 (2003-08-01), Mahajani et al.
patent: 2003/0161183 (2003-08-01), Tran
patent: 2003/0214835 (2003-11-01), Nejad et al.
patent: 2003/0227795 (2003-12-01), Seyyedy et al.
patent: 2004/0057276 (2004-03-01), Nejad et al.
patent: 2004/0080980 (2004-04-01), Lee
patent: 2004/0124415 (2004-07-01), Walker et al.
patent: 2004/0124466 (2004-07-01), Walker et al.
patent: 2004/0125629 (2004-07-01), Scheuerlein et al.
patent: 2004/0125653 (2004-07-01), Tran et al.
patent: 2004/0145024 (2004-07-01), Chen et al.
patent: 2004/0214379 (2004-10-01), Lee et al.
patent: 2005/0018485 (2005-01-01), Noguchi et al.
patent: 2005/0111260 (2005-05-01), Nazarian
patent: 2005/0121790 (2005-06-01), Cleeves et al.
patent: 0 528 367 (1993-02-01), None
patent: 0 575 051 (1993-12-01), None
patent: 62-142363 (1987-06-01), None
patent: 62-155568 (1987-07-01), None
patent: 1998-10149688 (1998-06-01), None
patent: 2001-358237 (2001-12-01), None
patent: 2002-280467 (2002-09-01), None
patent: WO-2002-43067 US (2002-05-01), None
Durisety, Chandra Sekhar Acharyulu, “Analysis and Characterization of Single-Poly Floating Gate Devices in 0.35um PDSOI Process”, A Thesis Presented for the Master of Science Degree, The University of Tennessee, Knoxville, Dec. 2002, pp. i-viii and 1-80.
Evans, Robert J., et al., “Energy Consumption Modeling and Optimization for SRAM's,” IEEE Journal of Solid-State Circuits, vol. 30, No. 5, May 1995, pp. 571-579.
Jung, Tae-Sung, et al., “A 117-mm23.3-V Only 128-Mb Multilevel NAND Flash Memory for Mass Storage Applications,” IEEE Journal of Solid-State Circuits, vol. 31, No. 11, Nov. 1996, pp. 1575-1583.
Kawagoe, Hiroto, et al., “Minimum Size ROM Structure Compatible with Silicon-Gate E/D MOS LSI,” IEEE Journal of Solid-State Circuits, vol. SC-11, No. 3, Jun. 1976, pp. 360-364.
Kim, Kyu-Hyoun, et al., “An 8-Bit-Resolution, 360-μs Write Time Nonvolatile Analog Memory Based on Differentially Balanced Constant-Tunneling-Current Scheme (DBCS),” IEEE Journal of Solid-State Circuits, vol. 33, No. 11, Nov. 1998, pp. 1758-1762.
Kim, Byungcheul, et al., “A Scaled SONOS Single-Transistor Memory Cell for a High-Density NOR Structure with Common Source Lines,” Journal of the Korean Physical Society, vol. 41, No. 6, Dec. 2002, pp. 945-948.
Kim, Byungcheul, et al., “Single Power Supply Operated and Highly Reliable SONOS EEPROMs,” Journal of the Korean Physical Society, vol. 40, No. 4, Apr. 2002, pp. 642-644.
Kitano, Yoshitaka, et al., “A 4-Mbit Full-Wafer ROM,” IEEE Journal of Solid-State Circuits, vol.
Chen En-Hsing
Fasoli Luca G.
Ilkbahar Alper
Nallamothu Sucheta
Scheuerlein Roy E.
Pham Ly Duy
SanDisk 3D LLC
Zagorin O'Brien Graham LLP
Zarabian Amir
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