NAND flash memory with read and verification threshold...

Details NAND flash memory with read and verification threshold... NAND flash memory with read and verification threshold...

2007-09-25

2007-09-25

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185220, C365S185330

Reexamination Certificate

active

11415365

ABSTRACT:
A plurality of cells in a flash memory device are coupled together in a series configuration, as in a NAND flash memory. A position of a first accessed cell is determined with reference to a ground potential in the flash memory device. A first word line signal is coupled to the first accessed cell. The first word line signal voltage level is adjusted in response to the position of the first accessed cell in its series of cells.

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