NAND flash memory with integrated bit line capacitance

Details NAND flash memory with integrated bit line capacitance NAND flash memory with integrated bit line capacitance

2009-05-29

2011-11-01

Mai, Son (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S149000, C365S185170

Reexamination Certificate

active

08050092

ABSTRACT:
Method and apparatus for outputting data from a memory array having a plurality of non-volatile memory cells arranged into rows and columns. In accordance with various embodiments, charge is stored in a volatile memory cell connected to the memory array, and the stored charge is subsequently discharged from the volatile memory cell through a selected column. In some embodiments, the volatile memory cell is a dynamic random access memory (DRAM) cell from a row of the cells with each DRAM cell along the row coupled to a respective column in the memory array, and each column of non-volatile memory cells comprises Flash memory cells connected in a NAND configuration.

REFERENCES:
patent: 5455786 (1995-10-01), Takeuchi et al.
patent: 5623442 (1997-04-01), Gotou et al.
patent: 5768208 (1998-06-01), Bruwer et al.
patent: 6198652 (2001-03-01), Kawakubo et al.
patent: 6201733 (2001-03-01), Hiraki et al.
patent: 6528839 (2003-03-01), Shukuri et al.
patent: 6992928 (2006-01-01), Inoue
patent: 7180787 (2007-02-01), Hosono et al.
patent: 7319613 (2008-01-01), Forbes
patent: 7333363 (2008-02-01), Nakai et al.
patent: 7397686 (2008-07-01), Takashima et al.
patent: 7414888 (2008-08-01), Yeh
patent: 7417893 (2008-08-01), Bhattacharyya et al.
patent: 7508707 (2009-03-01), Nakai et al.
patent: 7697333 (2010-04-01), Isobe
patent: 7782683 (2010-08-01), Sohn et al.
patent: 7859899 (2010-12-01), Shakeri et al.
patent: 7872919 (2011-01-01), Tanaka et al.

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