Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-12-13
2005-12-13
Mai, Son (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240, C365S185330
Reexamination Certificate
active
06975542
ABSTRACT:
A plurality of cells in a flash memory device are coupled together in a series configuration, as in a NAND flash memory. A position of a first accessed cell is determined with reference to a ground potential in the flash memory device. A first word line signal is coupled to the first accessed cell. The first word line signal voltage level is adjusted in response to the position of the first accessed cell in its series of cells.
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Leffert Jay & Polglaze PA
Mai Son
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