NAND flash memory with fixed charge

Details NAND flash memory with fixed charge NAND flash memory with fixed charge

2007-03-29

2009-11-17

Lee, Eugene (Department: 2891)

Static information storage and retrieval

Floating gate

Particular connection

C257S315000, C257S324000, C257S325000, C257S405000, C257SE29255

Reexamination Certificate

active

07619926

ABSTRACT:
A string of nonvolatile memory cells connected in series includes fixed charges located between floating gates and the underlying substrate surface. Such a fixed charge affects distribution of charge carriers in an underlying portion of the substrate and thus affects threshold voltage of a device. A fixed charge layer may extend over source/drain regions also.

REFERENCES:
patent: 3328210 (1967-06-01), Mccaldin et. al.
patent: 5108940 (1992-04-01), Williams
patent: 5264380 (1993-11-01), Pfiester
patent: 5633184 (1997-05-01), Tamura et al.
patent: 5923976 (1999-07-01), Kim
patent: 6754104 (2004-06-01), King
patent: 6790755 (2004-09-01), Jeon
patent: 6888755 (2005-05-01), Harari
patent: 7026684 (2006-04-01), Sakuma et al.
patent: 7075143 (2006-07-01), Fujiwara et al.
patent: 7157769 (2007-01-01), Forbes
patent: 7164603 (2007-01-01), Shih et al.
patent: 2002/0014645 (2002-02-01), Kobayashi
patent: 2004/0058489 (2004-03-01), Arai
patent: 2004/0079988 (2004-04-01), Harari
patent: 2004/0132261 (2004-07-01), Cho
patent: 2004/0164340 (2004-08-01), Arai
patent: 2005/0006696 (2005-01-01), Noguchi et al.
patent: 2005/0184327 (2005-08-01), Ozawa
patent: 2005/0199939 (2005-09-01), Lutze et al.
patent: 2006/0044872 (2006-03-01), Nazarian
patent: 2006/0060929 (2006-03-01), Buh et al.
patent: 2006/0138478 (2006-06-01), Buh et al.
patent: 2006/0145254 (2006-07-01), Buh et al.
patent: 2006/0194388 (2006-08-01), Hashimoto
patent: 2006/0211205 (2006-09-01), Jeon
patent: 2006/0228841 (2006-10-01), Kim et al.
patent: 2006/0244047 (2006-11-01), Gopalakrishnan et al.
patent: 2006/0245246 (2006-11-01), Lung
patent: 2006/0267067 (2006-11-01), Ishihara
patent: 2006/0292802 (2006-12-01), Lee et al.
Shoji et al., A Novel EPROM Device Fabricated Using Focused Boron Ion-Beam Implantation, IEEE transaction on Electron Devices, vol. ED-34, No. 6, Jun. 1987, pp. 1264-1270.
Quirk et al., Semiconductor Manufacturing Technology, 2001, Prentice Hall, pp. 233-234, ISBN 0-13-081520-9.
S. A. Campbell, The Science and Engineering of Microelectronic Fabrication, Oxford University Press, 2ndEd., 2001, pp. 81- 83.
R. Waser, Nanoelectronics and Information Technology, Wiley-VCH, 2ndEd., 2005, p. 35.
Tsividis Y., Operation and Modeling of the MOS Transistor, 2nded., MacGraw-Hill, 1999, pp. 51-54.
B. Deal, Standardized Terminology for Oxide Charges Associated with Thermally Oxidized Silicon, Journal of the Electrochemical Society: Solid-State Science and Technology, vol. 127, No. 4, pp. 979-981, Apr. 1980.
U.S. Appl. No. 11/626,778, filed Jan. 24, 2007, Orimoto.
U.S. Appl. No. 11/626,784, filed Jan. 24, 2007, Chien.
International Search Report and Written Opinion dated May 28, 2008 in PCT Application No. PCT/US2007/088145.
Office Action dated Apr. 28, 2009 in U.S. Appl. No. 11/692,961.
Response to Office Action filed Jul. 23, 2009 in U.S. Appl. No. 11/692,961.

Affiliated with

Also associated with

Rating

NAND flash memory with fixed charge does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with NAND flash memory with fixed charge, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and NAND flash memory with fixed charge will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4082290