NAND flash memory device and method of programming the same

Details NAND flash memory device and method of programming the same NAND flash memory device and method of programming the same

2007-05-01

2007-05-01

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185120, C365S185170, C365S185250, C365S185280

Reexamination Certificate

active

10888067

ABSTRACT:
Provided is directed to a NAND flash memory device and a method of programming the same, which can improve integration of the device by removing a common source line connecting with a source line coupled to a plurality of cell blocks, control a voltage applied to a source line by each cell block, and rise a precharge level in a channel area by applying a pumping voltage to the source line relatively having low capacitance instead of a bitline having a large capacitance, and as a result of those, the NAND flash memory device can reduce disturbance, use a lower voltage than a power supply voltage on the bitline, which leads to reduce a current consumption.

REFERENCES:
patent: 6738290 (2004-05-01), Lee et al.
patent: 6859394 (2005-02-01), Matsunaga et al.
patent: 6859395 (2005-02-01), Matsunaga et al.
patent: 6859397 (2005-02-01), Lutze et al.
patent: 6956769 (2005-10-01), Lee

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