NAND flash memory device and method of programming same

Details NAND flash memory device and method of programming same NAND flash memory device and method of programming same

2005-10-04

2008-10-28

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185020, C365S185250, C365S185110, C365S185080

Reexamination Certificate

active

07443728

ABSTRACT:
Disclosed is a NAND flash memory device comprising a memory cell array connected to a page buffer via a plurality of bitlines. The page buffer stores input data to be programmed in the memory cell array. The memory cell array is programmed by establishing bitline voltages for the plurality of bitlines according to the input data and then applying a wordline voltage to the memory cell array. The bitline voltages are established by first precharging the bitlines to a power supply voltage and then selectively discharging the bitlines according to the input data. The bitlines are discharged sequentially, i.e., some of the bitlines are discharged before others.

REFERENCES:
patent: 5422856 (1995-06-01), Sasaki et al.
patent: 5430674 (1995-07-01), Javanifard
patent: 5625590 (1997-04-01), Choi et al.
patent: 6134145 (2000-10-01), Wong
patent: 6160750 (2000-12-01), Shieh
patent: 6480419 (2002-11-01), Lee
patent: 6522580 (2003-02-01), Chen et al.
patent: 6751124 (2004-06-01), Lee
patent: 6768682 (2004-07-01), Yano et al.
patent: 6806525 (2004-10-01), Takeuchi et al.
patent: 2002/0114188 (2002-08-01), Lee
patent: 2004/0027881 (2004-02-01), Furukawa
patent: 2004/0264275 (2004-12-01), Gou
patent: 2002-251896 (2002-09-01), None
patent: 2002-288987 (2002-10-01), None
patent: 100206696 (1999-04-01), None
patent: 100255955 (2000-02-01), None
patent: 1020010081243 (2001-08-01), None
patent: 1020020069092 (2002-08-01), None
patent: 1020030088595 (2003-11-01), None

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