Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-12-18
2007-12-18
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185170, C365S185110
Reexamination Certificate
active
11275282
ABSTRACT:
A NAND flash memory device, and more particularly, to NAND flash memory device and method of manufacturing operating the same as described. A dielectric film and a conduction layer are formed between cell gates so that between-cell gates are buried. Therefore, an interference effect between floating gates, which becomes profound with the level of integration increasing, and program threshold voltage distributions between cells can be improved.
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Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Nguyen Viet Q.
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